A 5.8 GHz class-AB power amplifier with 25.4 dBm saturation power and 29.7% PAE
نویسندگان
چکیده
منابع مشابه
A 2.45 GHz 30dBm differential 0.18 μm CMOS class-E power amplifier with 42% PAE
This paper presents a 30dBm (1W) class-E power amplifier projected in a standard 0.18-μm CMOS technology. The power amplifier (PA) consists in two differentials stages. The main stage employs a cascode class-E RF power amplifier with a self-biasing circuit. The driver stage uses the technique of Injection-Locking to substantially reduce the input power signal, maintaining a high gain. At 2.45 G...
متن کاملA Class E Power Amplifier with Low Voltage Stress
A new output structure for class E power amplifier (PA) is proposed in this paper. A series LC resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. This resonator causes low impedance at the second harmonic. The output circuit is designed to shape the switch voltage of the class E amplifier and lower the voltage stress of the transistor. T...
متن کاملA 28-36 GHz Optimized CMOS Distributed Doherty Power Amplifier with A New Wideband Power Divider Structure
Background and Objectives: In this paper, a new design strategy was proposed in order to enhance bandwidth and efficiency of power amplifier. Methods: To realize the introduced design strategy, a power amplifier was designed using TSMC CMOS 0.18um technology for operating in the Ka band, i.e. the frequency range of 26.5-40GHz. To design the power amplifier, first a power divider (PD) with a ver...
متن کامل3.5-3.8GHz class-E balanced GaN HEMT power amplifier with 20W Pout and 80% PAE
In this study, balanced and single ended class-E power amplifiers (PAs) were designed and realized for 3.5–3.8GHz band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations were made on low loss Rogers RT5880 dielectric material which has 0.254mm thickness and 2.2 dielectric constant. Proposed balanced class-E PA has approximately 20W (43 dBm) output power with 80%...
متن کاملa class e power amplifier with low voltage stress
a new output structure for class e power amplifier (pa) is proposed in this paper. a series lc resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. this resonator causes low impedance at the second harmonic. the output circuit is designed to shape the switch voltage of the class e amplifier and lower the voltage stress of the transistor. t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Science China Information Sciences
سال: 2017
ISSN: 1674-733X,1869-1919
DOI: 10.1007/s11432-016-0299-4